Heavy ion induced damage in crystalline silicon and diodes

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 156, Issue 1, 1999, Pages 72-77

  Sathyavathi, P ^a   Chavan, S T ^a   Kanjilal, D ^b   Bhoraskar, V N ^a  

^a UNIVERSITY OF PUNE   (India)

^b INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; CHARGE CARRIERS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTALLINE MATERIALS; HEAVY IONS; ION BOMBARDMENT; LITHIUM; OXYGEN; RADIATION DAMAGE; SEMICONDUCTOR DIODES;

MINORITY CARRIER LIFETIME;

SEMICONDUCTING SILICON;

EID: 0032665750     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00289-X     Document Type: Article

References (14)

1. Dunlop A., Lesueur D. Radiat. Eff. Def. Solids. 126:1993;123.
2. Mary P., Bogdanski P., Toulemonde M., Spohr R., Vetter J. Nucl. Instr. and Meth. B. 62:1992;391.
3. Mikou M., Carin R., Bogdanski P., Madelon R. Nucl. Instr. and Meth. B. 107:1996;246.
4. Toulemonde M., Dural J., Nouet G., Mary P., Hamet J.F., Beaufort M.F., Desoyer J.C., Blanchard C., Auleytner j. Phys. Status Solidi. 114:1989;467.
5. Levalois M., Girard J.P., Allais G., Hairie A., Metzner M.N., Paumier E. Nucl. Instr. and Meth. B. 63:1992;25.
6. Balanzat E., Jousset J.C., Toulemonde M. Nucl. Instr. and Meth. B. 32:1988;368.
7. Zhu Y., Cai Z.X., Budhani R.C., Suenaga M., Welch D.O. Phys. Rev. B. 48:1993;6436.
8. Klaumünzer S., Hon M., Schumacher G. Phys. Rev. Lett. 57:1986;850.
9. V.N. Bhoraskar, in: Proceedings of the 14th International Conference on Application of Accelerators in Research and Industry, Denton, Texa, 1996, p. 1025.
10. Chavan S.T., Bhave P.S., Bhoraskar V.N., Kanjilal D. J. Appl. Phys. 78:1995;2328.
11. Bhave P.S., Bhoraskar V.N. Nucl. Instr. and Meth. B. 127/128:1997;383.
12. J.P. Biersack, J.F. Ziegler, TRIM-96 (C), ISBN-0-08-021603-X.
13. Dunlop A., Lesueur D., Morilla J., Dural J., Spohr R., Vetter J. Nucl. Instr. and Meth. B. 48:1990;419.
14. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., New York, p. 811.