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Semiconductor Science and Technology

Volumn 16, Issue 4, 2001, Pages 216-221

Heteroepitaxial growth of high quality InSb films on Si(111) substrates using a two-step growth method

(4) Rao, B V a Gruznev, D a Tambo, T a Tatsuyama, C a

a UNIVERSITY OF TOYAMA (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DETERIORATION; ELECTRIC PROPERTIES; ELECTRON MOBILITY; EPITAXIAL GROWTH; HALL EFFECT; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SURFACES; THERMAL EFFECTS;

EPITAXIAL QUALITY; FLUX RATIO; HALL MEASUREMENTS; HETEROEPITAXIAL GROWTH; INDIUM ANTIMONIDE FILMS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0035308418 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/16/4/305 Document Type: Article

Times cited : (9)

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