Comparative I(V) study of pure Schottky contacts used in spin-LEDs

Solid-State Electronics

Volumn 48, Issue 5, 2004, Pages 845-849

  Bobo, J F ^a   Couderc, S ^a   Arnoult, A ^b   Fontaine, C ^a   Mamy, R ^a  

^a CNRS   (France)

^b LAAS CNRS   (France)

Author keywords

Metal semiconductor structures; Schottky barriers; Spin LEDs; Tunneling

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; ELECTROLUMINESCENCE; ELECTRON TUNNELING; HETEROJUNCTIONS; LIGHT EMITTING DIODES; LITHOGRAPHY; MAGNETRON SPUTTERING; POLARIZATION; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

METAL-SEMICONDUCTOR STRUCTURES; SCHOTTKY BARRIERS; SPIN-LEDS;

SCHOTTKY BARRIER DIODES;

EID: 1242343877     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.034     Document Type: Article

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