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Volumn 2, Issue 3, 2006, Pages 386-389

Atomistic insights for InAs quantum dot formation on GaAs(001) using STM within a MBE growth chamber

(5) Tsukamoto, Shiro a Honma, Tsuyoshi a,d Bell, Gavin R b Ishii, Akira c Arakawa, Yasuhiko a

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF WARWICK (United Kingdom)

c TOTTORI UNIVERSITY (Japan)

d NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

Molecular beam epitaxy; Quantum dots; Scanning tunneling microscopy; Self assembly

Indexed keywords

IMAGE ANALYSIS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS;

MBE GROWTH CHAMBERS; SURFACE COVERAGE; WETTING LAYERS (WL);

SEMICONDUCTOR QUANTUM DOTS;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE; QUANTUM DOT;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; GALLIUM; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MICROSCOPY, ELECTRON, SCANNING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; QUANTUM DOTS; SURFACE PROPERTIES;

EID: 32344439611 PISSN: 16136810 EISSN: None Source Type: Journal
DOI: 10.1002/smll.200500339 Document Type: Article

Times cited : (44)

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