First principles calculation of Indium migration barrier energy on an InAs(001) surface

Thin Solid Films

Volumn 464-465, Issue , 2004, Pages 35-37

  Fujiwara, Katsutoshi ^a   Ishii, Akira ^a,b   Aisaka, Tsuyoshi ^a  

^a TOTTORI UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

First principles calculation; InAs; Migration barrier energy

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS; WETTING;

ADATOMS; BRILLOUIN ZONE; FIRST PRINCIPLES CALCULATION; MIGRATION BARRIER ENERGY;

SURFACE PHENOMENA;

EID: 4644243944     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.06.062     Document Type: Article

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