In situ scanning tunneling microscopy of InAs quantum dots on GaAs(0 0 1) during molecular beam epitaxial growth

Surface Science

Volumn 544, Issue 2-3, 2003, Pages 234-240

  Bell, G R ^a,b   Pristovsek, M ^a,c   Tsukamoto, S ^a,d   Orr, B G ^a,e   Arakawa, Y ^d   Koguchi, N ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF WARWICK   (United Kingdom)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d UNIVERSITY OF TOKYO   (Japan)

^e UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Epitaxy; Gallium arsenide; Indium arsenide; Scanning tunneling microscopy

Indexed keywords

MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

WETTING LAYERS (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0142009015     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.08.021     Document Type: Article

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