SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium - Proceedings

Volumn 640, Issue , 2001, Pages

Chemical-mechanical polishing and rapid thermal annealing of SiC: Raman spectroscopy and ESCA (XPS) studies.

(5) Roughani, B a Ramabadran, U a Phillips, D a Mitchel, W C a Neslen, C L a

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL BONDS; CHEMICAL MECHANICAL POLISHING; FREQUENCIES; NITROGEN; PHONONS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SUBSTRATES; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRON SPECTROSCOPY FOR CHEMICAL ANALYSIS; MECHANICALLY POLISHED; SILICON OXYCARBIDE;

SILICON CARBIDE;

EID: 0034869167 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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