Electrical transport properties of highly doped N-type GaN epilayers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3287, Issue , 1998, Pages 321-326

  Lee, H J ^a   Cheong, M G ^a   Suh, E K ^a   Razeghi, M ^a  

^a Chonbuk National University   (South Korea)

Author keywords

Electron transport; Gallium nitride; Impurity band; Scattering mechanisms; Two band model

Indexed keywords

ELECTRON SCATTERING; ELECTRON TRANSPORT PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; THERMODYNAMIC PROPERTIES;

EPILAYERS;

GALLIUM NITRIDE;

EID: 0032224788     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.304496     Document Type: Conference Paper

References (8)