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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 7 B, 2005, Pages 5824-5828

Outgassing characteristics of low-molecular-weight resists for extreme ultraviolet lithography

(7) Hada, Hideo a Hirayama, Taku a Shiono, Daiju a Onodera, Junichi a Watanabe, Takeo b Lee, Seung Yoon b Kinoshita, Hiroo b

a TOKYO OHKA KOGYO CO LTD (Japan)

b UNIVERSITY OF HYOGO (Japan)

Author keywords

Chemically amplified resist; EUVL; Low molecular weight; Outgassing

Indexed keywords

DEGASSING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LITHOGRAPHY; MASS SPECTROMETRY; MOLECULAR WEIGHT; PHENOLS;

CHEMICALLY AMPLIFIED RESIST; EUVL; LOW MOLECULAR WEIGHT;

PHOTORESISTS;

EID: 31844435742 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.44.5824 Document Type: Article

Times cited : (12)

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