Fine pattern replication by EUV lithography

Journal of Photopolymer Science and Technology

Volumn 14, Issue 4, 2001, Pages 567-572

  Hamamoto, Kazuhiro ^a   Watanabe, Takeo ^a   Tsubakino, Harushige ^a   Kinoshita, Hiroo ^a   Shoki, Tsutomu ^b   Hosoya, Morio ^b  

^a UNIVERSITY OF HYOGO   (Japan)

^b HOYA Corporation Electro optics Company R and D Center   (Germany)

Author keywords

Cr mask; Extreme Ultraviolet Lithography; Fine pattern; Hole pattern

Indexed keywords

CHROMIUM; MOLYBDENUM; SILICON;

ARTICLE; EXTREME ULTRAVIOLET LITHOGRAPHY; ILLUMINATION; LITHOGRAPHY; NANOPARTICLE; OPTICS; SCANNING ELECTRON MICROSCOPY; SYNCHROTRON; THICKNESS; ULTRAVIOLET IRRADIATION;

EID: 0035747048     PISSN: 09149244     EISSN: None     Source Type: Journal    
DOI: 10.2494/photopolymer.14.567     Document Type: Article

References (7)