An investigation of low-frequency noise in complementary SiGe HBTs

IEEE Transactions on Electron Devices

Volumn 53, Issue 2, 2006, Pages 329-338

  Zhao, Enhai ^a   Krithivasan, Ramkumar ^a   Sutton, Akil K ^a   Jin, Zhenrong ^a   Cressler, John D ^a   El Kareh, Badih ^b   Balster, Scott ^b   Yasuda, Hiroshi ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Texas Instruments Deutschland GmbH   (Germany)

Author keywords

1 f noise; Complementary; Interfacial oxide; Low frequency noise; SiGe HBTs

Indexed keywords

ELECTRONS; HOLE MOBILITY; IONIZING RADIATION; POLYSILICON; SPURIOUS SIGNAL NOISE; TEMPERATURE MEASUREMENT;

INTERFACIAL OXIDE; LOW-FREQUENCY NOISE; PROTON RADIATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 31744446845     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.862698     Document Type: Article

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