Using Proton Irradiation to Probe the Origins of Low-Frequency Noise Variations in SiGe HBTs

IEEE Transactions on Nuclear Science

Volumn 50, Issue 6 I, 2003, Pages 1816-1820

  Jin, Zhenrong ^a   Johansen, Jarle A ^b   Cressler, John D ^a   Reed, Robert A ^c   Marshall, Paul W ^c   Joseph, Alvin J ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF TROMSØ   (Norway)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d IBM MICROELECTRONICS   (United States)

Author keywords

Bipolar transistors; Heterojunction bipolar transistor (HBT); I f noise; Low frequency noise; Proton irradiation; SiGe

Indexed keywords

ACOUSTIC NOISE; CMOS INTEGRATED CIRCUITS; DEGRADATION; DOSIMETRY; GERMANIUM; HOLE TRAPS; OPTOELECTRONIC DEVICES; PROTON IRRADIATION; SILICON;

1/F NOISE; LOW-FREQUENCY NOISE; SIGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1242332813     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.820739     Document Type: Conference Paper

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