Electrical switching phenomena in a phase change material in contact with metallic nanowires

Japanese Journal of Applied Physics

Volumn 41, Issue 12B, 2002, Pages L1443-L1445

  Tanaka, Hideyuki ^a   Nishihara, Takashi ^a   Ohtsuka, Takashi ^a   Morimoto, Kiyoshi ^a   Yamada, Noboru ^a   Morita, Kiyoyuki ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

Electrical switching; Ge2Sb2Te5; Nanowire; Nonvolatile memory; Phase change; Thermal resistor device; Track etched membrane

Indexed keywords

NANOWIRES; PHASE CHANGE MATERIALS; SWITCHING;

ELECTRICAL SWITCHING; GE2SB2TE5; NON-VOLATILE MEMORY; PHASE CHANGE; THERMAL RESISTOR; TRACK-ETCHED MEMBRANE;

PHASE CHANGE MEMORY;

EID: 3142760263     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.41.L1443     Document Type: Article

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