Where is the mobility edge in amorphous semiconductors?

Journal of Optoelectronics and Advanced Materials

Volumn 2, Issue 1, 2000, Pages 5-11

  Tanaka, Keiji ^a   Nakayama, Shin Ichi ^a,b  

^a HOKKAIDO UNIVERSITY   (Japan)

^b FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Amorphous semiconductor; Chalcogenide glass; Mobility gap; Photoconduction

Indexed keywords

ARSENIC COMPOUNDS; CHALCOGENIDES; GLASS; SELENIUM COMPOUNDS;

ABSORPTION EDGES; CHALCOGENIDE GLASS; CRYSTALLINE COUNTERPART; LOW TEMPERATURES; MOBILITY GAP; PHOTOCONDUCTION; PHOTON ENERGY; SPECTRAL DATA;

AMORPHOUS SEMICONDUCTORS;

EID: 0038259866     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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