Development of δB/i-Si/δSb and δB/i-Si/δSb/i-Si/δB resonant interband tunnel diodes for integrated circuit applications

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 159-160

  Rommel, Sean L ^a   Jin, Niu ^a   Dillon, T E ^a   Di Giacomo, Sandro J ^a   Banyai, Joel ^a   Cord, Bryan M ^a   D'Imperio, C ^a   Hancock, D J ^a   Kirpalani, N ^a   Emanuele, V ^a   Berger, Paul R ^a   Thompson, Phillip E ^a   Hobart, Karl D ^a   Lake, Roger ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MOLECULAR BEAM EPITAXY; RESONANT CIRCUITS; SCHEMATIC DIAGRAMS; SUBSTRATES; TEMPERATURE;

PEAK-TO-VALLEY CURRENT RATIO; RESONANT INTERBAND TUNNEL DIODES; TUNNEL BARRIER;

TUNNEL DIODES;

EID: 0033645697     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)