-
1
-
-
0034286492
-
Quantum transistors: Toward nanoelectronica
-
Sept.
-
L. Geppert, "Quantum Transistors: Toward Nanoelectronica," IEEE Spectrum, Sept. 2000.
-
(2000)
IEEE Spectrum
-
-
Geppert, L.1
-
2
-
-
33646900503
-
Device scaling limits of Si MOSFETs and their application dependencies
-
D.J. Frank, R.H. Dennard, E. Nowak, P.M. Solomon, Y. Taur, and H.P. Wong, "Device Scaling Limits of Si MOSFETs and Their Application Dependencies," Proc. of the IEEE, vol. 89, pp. 259-287, 2001.
-
(2001)
Proc. of the IEEE
, vol.89
, pp. 259-287
-
-
Frank, D.J.1
Dennard, R.H.2
Nowak, E.3
Solomon, P.M.4
Taur, Y.5
Wong, H.P.6
-
4
-
-
0000284042
-
0.5/Si resonant interband tunneling diodes
-
0.5/Si Resonant Interband Tunneling Diodes," Appl. Phys. Lett., vol. 73, pp. 2191-93, 1998.
-
(1998)
Appl. Phys. Lett.
, vol.73
, pp. 2191-2193
-
-
Rommel, S.L.1
Dillon, T.E.2
Dashiell, M.W.3
Feng, H.4
Kolodzey, J.5
Berger, P.R.6
Thompson, P.E.7
Hobart, K.D.8
Lake, R.9
Seabaugh, A.C.10
Klimeck, G.11
Blanks, D.K.12
-
5
-
-
0032652007
-
High room temperature peak-to-valley current ratio in Si based esaki diodes
-
R. Duschl, O.G. Schmidt, C. Reitemann, E. Kasper, and K. Eberl, "High Room Temperature Peak-to-Valley Current Ratio in Si Based Esaki Diodes," Electronics Letters, vol. 35, pp. 1111-12, 1999.
-
(1999)
Electronics Letters
, vol.35
, pp. 1111-1112
-
-
Duschl, R.1
Schmidt, O.G.2
Reitemann, C.3
Kasper, E.4
Eberl, K.5
-
6
-
-
0000194609
-
Epitaxially grown Si/SiGe interband tunneling diodes with high room-temperature peak-to-valley ratio
-
R. Duschl, O.G. Schmidt, and K. Eberl, "Epitaxially Grown Si/SiGe Interband Tunneling Diodes with High Room-Temperature Peak-to-Valley Ratio," App. Phys. Lett., vol. 76, pp. 879-81, 2000.
-
(2000)
App. Phys. Lett.
, vol.76
, pp. 879-881
-
-
Duschl, R.1
Schmidt, O.G.2
Eberl, K.3
-
7
-
-
0042878340
-
SiGe diffusion barriers for P-doped Si/SiGe resonant interband tunnel diodes
-
N. Jin, A.T. Rice, P.R. Berger, P.E. Thompson, P.H. Chi and D.S. Simons, "SiGe Diffusion Barriers for P-doped Si/SiGe Resonant Interband Tunnel Diodes", IEEE Proceeding, Lester Eastman Conference on High Performance Devices, 2002, pp. 265-269.
-
(2002)
IEEE Proceeding, Lester Eastman Conference on High Performance Devices
, pp. 265-269
-
-
Jin, N.1
Rice, A.T.2
Berger, P.R.3
Thompson, P.E.4
Chi, P.H.5
Simons, D.S.6
-
8
-
-
0032681456
-
The manufacture of CMOS integrated circuit in a university microelectronics laboratory
-
Minneapolis, MN, June 20-23
-
L. Fuller, "The manufacture of CMOS integrated circuit in a university microelectronics laboratory", IEEE Thirteenth Biennial University/Government/Industry Microelectronics Symposium, Minneapolis, MN, June 20-23, pp.211-215, 1999.
-
(1999)
IEEE Thirteenth Biennial University/Government/Industry Microelectronics Symposium
, pp. 211-215
-
-
Fuller, L.1
-
9
-
-
0000466502
-
Low-temperature cleaning processes for Si molecular beam epitaxy
-
May-Jun
-
P.E. Thompson, M.E. Twigg, D.J. Godbey, K.D. Hobart, D.S. Simons, "Low-temperature Cleaning Processes for Si Molecular Beam Epitaxy", J. Vac. Sci. Tech., pp. 1077-1082, May-Jun 1993.
-
(1993)
J. Vac. Sci. Tech.
, pp. 1077-1082
-
-
Thompson, P.E.1
Twigg, M.E.2
Godbey, D.J.3
Hobart, K.D.4
Simons, D.S.5
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