GaN based transistors for high temperature applications

Materials Science and Engineering B

Volumn 46, Issue 1-3, 1997, Pages 69-73

  Asif Khan, M ^a   Shur, Michael S ^b  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

Cutoff frequency; Energy gap; Gate length

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL IMPURITIES; ELECTRIC RESISTANCE; ENERGY GAP; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE PROPERTIES; IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; TRANSPORT PROPERTIES;

CUTOFF FREQUENCY; GALLIUM NITRIDE;

GATES (TRANSISTOR);

EID: 0031121571     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01935-6     Document Type: Article

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