Processing-induced electron traps in n-type GaN

Materials Science and Engineering: B

Volumn 82, Issue 1-3, 2001, Pages 102-104

  Auret, F D ^a   Goodman, S A ^a   Myburg, G ^a   Mohney, S E ^b   De Lucca, J M ^b  

^a UNIVERSITY OF PRETORIA   (South Africa)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Defects; DLTS; GaN; Metallization processes; Rectification properties; Schottky barrier diodes

Indexed keywords

CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; ELECTRIC CONTACTS; ELECTRODEPOSITION; HOLE TRAPS; INTERFACES (MATERIALS); METALLIZING; SCHOTTKY BARRIER DIODES; SPUTTER DEPOSITION;

PROCESSING-INDUCED ELECTRON TRAPS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035933164     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00723-6     Document Type: Article

References (12)