Effect of annealing on defects in as-grown and γ-ray irradiated n-GaN layers

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 533-536

  Shmidt, N M ^a   Davydov, D V ^a   Emtsev, V V ^a   Krestnikov, I L ^a   Lebedev, A A ^a   Lundin, W V ^a   Poloskin, D S ^a   Sakharov, A V ^a   Usikov, A S ^a   Osinsky, A V ^b  

^a IOFFE INSTITUTE   (Russian Federation)

^b NZ Applied Technologies   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242996     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<533::AID-PSSB533>3.0.CO;2-S     Document Type: Article

References (7)

1. V.V. EMTSEV, V.Yu. DAVYDOV, LN. GONCHARUK, E.V. KALININA, V.V. KOZLOVSKII, D.S. POLOSKIN, A.V. SAKMAROV, N.M. SHMIDT, A.N. SMIRNOV, and A.S. USIKOV, Mater, Sci. Forum 258/263, 1143 (1997).
2. Z.-Q. FANG, D.C. LOOK, W. KIM, Z. FAN, A. BOTCHKAREV, and H. MORKOC, Appl. Phys. Lett. 72, 2277 (1998).
3. F.D. AURET, S.A. GOODMAN, F.K. KOSCHNICK, J.-M. SPAETH, B. BEAUMONT, and P. GIBART, Appl. Phys. Lett. 74, 407 (1999).
4. S.A. GOODMAN, F.D. AURET, F.K. KOSCHNICK, J.-M. SPAETH, B. BEAUMONT, and P. GIBART, Appl. Phys. Lett. 74, 809 (1999).
5. A.V. SAKHAROV, W.V. LUNDIN, A.S. USIKOV, YU.A. KUDRYAVTSEV, A.V. LUNEV, Y.M. SHERNIAKOV, and N.N. LEDENTSOV, MRS Internet J. Nitride Semicond. Res. 3, 28 (1998).
6. J. KANG and T. OGAWA, J. Mater. Res. 14, 1 (1999).
7. O.YU. BORKOVSKAYA, N.L. DMITRUK. R.V. KONAKOVA, and YU.A. TKHORIK, phys. stat. sol. (a) 48, K55 (1978).