Improved C-V characteristics of metal-oxide-semiconductor capacitors with tantalum nitride gate electrodes grown by ultra-low-pressure chemical vapor deposition

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 1, 2005, Pages 42-47

  Kadoshima, Masaru ^a   Akiyama, Koji ^a   Yamamoto, Katsuhiko ^a   Fujiwara, Hideaki ^a   Yasuda, Tetsuji ^b   Nabatame, Toshihide ^a   Toriumi, Akira ^a,c  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRODES; MOS CAPACITORS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TEMPERATURE DISTRIBUTION; THERMAL EXPANSION; THIN FILMS;

METAL GATE ELECTRODES; REACTION LAYERS;

TANTALUM COMPOUNDS;

EID: 31144465720     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1835311     Document Type: Article

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