Flat-band voltage shift of MOS capacitors with tantalum nitride gate electrodes induced by post metallization annealing

Materials Research Society Symposium - Proceedings

Volumn 786, Issue , 2003, Pages 279-284

  Kadoshima, M ^a   Yamamoto, K ^a   Fujiwara, H ^a   Akiyama, K ^a   Tominaga, K ^a   Yamagishi, N ^a   Iwamoto, K ^a   Ohno, M ^a   Yasuda, T ^a   Nabatame, T ^a   Toriumi, A ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; ELECTRODES; MAGNETRON SPUTTERING; METALLIZING; REACTIVE ION ETCHING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; TANTALUM COMPOUNDS;

BUBBLING TRANSFER METHOD; FLAT-BAND VOLTAGE SHIFT; TANTALUM NITRIDE GATE ELECTRODES; WORK FUNCTION;

MOS CAPACITORS;

EID: 2442486827     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-786-e6.27     Document Type: Conference Paper

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