Gate depletion in WSix/polysilicon gate stack and effects of phosphorus ion implantation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 5 A, 2003, Pages 2615-2620

  Cho, Won Ju ^a   Lee, Seongjae ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Annealing; Gate depletion; Gate oxide thickness; MOSFETs; Phosphorus ion implantation; Polysilicon thickness; WSix polysilicon gate stack

Indexed keywords

ACTIVATION ANALYSIS; DIFFUSION; ION IMPLANTATION; MOSFET DEVICES; PHOSPHORUS; POLYSILICON; RAPID THERMAL ANNEALING;

GATE DEPLETION;

GATES (TRANSISTOR);

EID: 0038380883     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2615     Document Type: Article

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