Effect of Al/N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN/GaN heterostructures

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3786-3788

  Storm, D F ^a   Katzer, D S ^a   Binari, S C ^a   Shanabrook, B V ^a   Zhou, Lin ^b   Smith, David J ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LEAKAGE CURRENT; CALIBRATION GROWTH; ELECTRONIC DEVICE; NUCLEATION LAYER;

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM COMPOUNDS;

EID: 9744231364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1808496     Document Type: Article

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