Interfacial reactions during GaN and AiN epitaxy on 4H- and 6H-SiC(0001)

Applied Physics Letters

Volumn 86, Issue 2, 2005, Pages

  Losurdo, Maria ^a   Capezzuto, Pio ^a   Bruno, Giovanni ^a   Brown, April ^b   Kim, Tong Ho ^b   Yi, Changhyun ^b   Zakharov, D N ^c   Liliental Weber, Z ^c  

^a CNR   (Italy)

^b Duke University   (United States)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DEPOSITION; DESORPTION; ELECTRIC FIELDS; ELLIPSOMETRY; GALLIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; SURFACE REACTIONS; THERMAL CONDUCTIVITY; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTON ENERGIES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PSEUDODIELECTRIC FUNCTION; SUBSURFACE NITRIDATION;

GALLIUM NITRIDE;

EID: 19744383572     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1852703     Document Type: Article

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