Plasma doping as a tool for the fabrication of ultra-shallow junctions

Extended Abstracts of the 1st International Workshop on Junction Technology, IWJT 2000

Volumn , Issue , 2000, Pages 23-27

  Liebert, R B ^a   Walther, S R ^a   Felch, S B ^a   Fang, Ziwei ^a   Koo, Bon Woong ^a   Hacker, D ^a  

^a VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ECONOMIC AND SOCIAL EFFECTS; ION IMPLANTATION; PLASMA SHEATHS;

BEAM LINES; BEAMLINE IMPLANTS; ELECTRICAL ACTIVATION; HIGH THROUGHPUT; JUNCTION DEPTH; PLASMA DOPING; TRADE OFF; ULTRA SHALLOW JUNCTION;

SEMICONDUCTOR DOPING;

EID: 84969544832     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWIT.2000.928772     Document Type: Conference Paper

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