The dose dependence of Si sputtering with low energy ions in shallow depth profiling

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 27-29

  Moon, D W ^a   Lee, H I ^a  

^a Korea Research Institute of Standards and Science   (South Korea)

Author keywords

MEIS; Shallow junction profiling; Sputtering yield; Surface transient sputtering

Indexed keywords

AMORPHOUS SILICON; CURRENT DENSITY; ION BOMBARDMENT; PROBABILITY; SECONDARY ION MASS SPECTROMETRY;

SHALLOW JUNCTION PROFILING;

SPUTTERING;

EID: 0037438047     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00642-6     Document Type: Conference Paper

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