Boron-enhanced diffusion of boron: Physical mechanisms

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2331-2333

  Agarwal, Aditya ^a   Gossmann, H J ^b   Eaglesham, D J ^b  

^a EATON CORPORATION   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DATA REDUCTION; INTERDIFFUSION (SOLIDS); ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; SUPERSATURATION;

BORON-ENHANCED DIFFUSION (BED); INTERSTITIALS; TRANSIENT-ENHANCED DIFFUSIONS;

SEMICONDUCTING BORON;

EID: 0032621457     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123841     Document Type: Article

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