Effect of low temperature annealing prior to laser annealing of an ultrashallow n+/p junction

Journal of the Electrochemical Society

Volumn 149, Issue 12, 2002, Pages

  Jang, Taesung ^a   Baek, Sungkweon ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; CRYSTAL DEFECTS; DENSITY (SPECIFIC GRAVITY); DOPING (ADDITIVES); ELECTRIC RESISTANCE; LASER APPLICATIONS; LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PLASMAS; RAPID THERMAL ANNEALING; REDUCTION; TRANSMISSION ELECTRON MICROSCOPY;

DEACTIVATION; DEFECT DENSITY; LASER ANNEALING; ULTRASHALLOW;

SEMICONDUCTOR JUNCTIONS;

EID: 0036963338     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1519852     Document Type: Article

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