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Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2512-2515

High-rate and smooth surface etching of Al2O3-TiC employing Inductively Coupled Plasma (ICP)

Author keywords

ICP; Ion bombardment; Magnetic head; RIE; Slider

Indexed keywords

ALUMINA; ARGON; CHLORINE COMPOUNDS; DRY ETCHING; ION BOMBARDMENT; MORPHOLOGY; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SURFACE ROUGHNESS; TITANIUM CARBIDE; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0030122463     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.2512     Document Type: Article
Times cited : (14)

References (12)
  • 2
    • 5244246390 scopus 로고    scopus 로고
    • U.S. Patent No. 4,673,996 (1987)
    • J. W. White: U.S. Patent No. 4,673,996 (1987).
    • White, J.W.1
  • 6
    • 5244358269 scopus 로고
    • Doctoral Thesis, Kanazawa Univ. [in Japanese]
    • T. Wada: Doctoral Thesis, Kanazawa Univ. (1992) p. 60 [in Japanese].
    • (1992) , pp. 60
    • Wada, T.1
  • 8
    • 5244328778 scopus 로고
    • in Japanese
    • T. Wada: Seramikusu 30 (1995) 28 [in Japanese].
    • (1995) Seramikusu , vol.30 , pp. 28
    • Wada, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.