Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2446-2449

  Park, H J ^a   Park, C ^b   Yeo, S ^b   Kang, S W ^a   Mastro, M ^a   Kryliouk, O ^a   Anderson, T J ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Yeungnam University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTIC MODULI; EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; RAMAN SPECTROSCOPY;

BIAXIAL STRAIN ENERGY; MICRO-RAMAN SPECTROSCOPY; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE;

EID: 27344460734     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461513     Document Type: Conference Paper

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