SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 498, Issue 1-2, 2006, Pages 167-173

Surface and optical properties of AlGaInP films grown on GaAs by metalorganic chemical vapor deposition

(5) Feng, Z C a Lin, H C a Zhao, J b Yang, T R c Ferguson, I d

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

b TIANJIN NORMAL UNIVERSITY (China)

c NATIONAL TAIWAN NORMAL UNIVERSITY (Taiwan)

d GEORGIA INSTITUTE OF TECHNOLOGY (United States)

Author keywords

AlGaInP; Atomic force microscopy (AFM); Metalorganic chemical vapor deposition (MOCVD); Nomarski microscopy; Photoluminescence; Raman scattering

Indexed keywords

ALUMINUM ALLOYS; ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES;

ALGAINP; INTEGRATED INTENSITY RATIO; NOMARSKI MICROSCOPY; SPATIAL CORRELATION MODEL;

THIN FILMS;

EID: 30944438472 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2005.07.070 Document Type: Conference Paper

Times cited : (15)

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