Effect of the InAIGaP matrix on the growth of self-assembled InP quantum dots by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 83, Issue 7, 2003, Pages 1349-1351

  Zhang, X B ^a   Heller, R D ^a   Noh, M S ^a   Dupuis, R D ^a   Walter, G ^b   Holonyak Jr , N ^b  

^a The University of Texas at Austin   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

SELF ASSEMBLED QUANTUM DOTS (SAQD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0041416348     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1600825     Document Type: Article

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