Nondestructive assessment of In0.48(Ga1-xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3824-3831

  Feng, Z C ^a,b   Armour, E ^a   Ferguson, I ^a   Stall, R A ^a   Holden, Todd ^c   Malikova, L ^c   Wan, J Z ^c,e   Pollak, Fred H ^c   Pavlosky, M ^d  

^a EMCORE CORPORATION   (United States)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c CITY UNIVERSITY OF NEW YORK   (United States)

^d Renishaw Inc   (United States)

^e Semiconduct Laser Intl Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL LATTICES; CRYSTAL ORIENTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NONDESTRUCTIVE EXAMINATION; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

HIGH RESOLUTION X RAY DIFFRACTION (HRXRD); LOW PRESSURE METALLORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); REFLECTANCE ANISOTROPY (RA) SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0032608067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369752     Document Type: Article

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