Probing the SiGe virtual substrate by high-resolution channeling contrast microscopy

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2940-2942

  Seng, H L ^a   Osipowicz, T ^a   Sum, T C ^a   Tok, E S ^a   Breton, G ^b   Woods, N J ^b   Zhang, J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITIONALLY GRADED SIGE; CROSS-HATCH; CROSS-HATCH SURFACE MORPHOLOGY; DEPTH-RESOLVED; DEVICE PROCESSING; HIGH RESOLUTION; LATTICE TILTS; LOW DENSITY; SIGE LAYERS; SIGE VIRTUAL SUBSTRATES; SUBMICRON; THREADING DISLOCATION; VIRTUAL SUBSTRATES;

CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GERMANIUM; HATCHES; SILICON ALLOYS; SUBSTRATES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955991283     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1474597     Document Type: Article

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