Continuous-wave operation of AlGaInP/GaInP quantum-well lasers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 5252-5254

  Dong, Jian Rong ^a   Teng, Jing Hua ^a   Chua, Soo Jin ^a   Foo, Boon Chin ^a   Wang, Yan Jun ^a   Zhang, Lian Wen ^a   Yuan, Hai Rong ^a   Yuan, Shu ^b  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOSPHORUS; PHOTOLITHOGRAPHY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS; TOXIC MATERIALS; VAPOR PRESSURE; WAVEGUIDES; X RAY DIFFRACTION ANALYSIS;

METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); MULTIPLE-QUANTUM-WELL (MQW); TERTIARYBUTYLARSINE (TAB);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 2442516367     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1695591     Document Type: Article

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