Development of cross-hatch morphology during growth of lattice mismatched layers

Applied Physics Letters

Volumn 77, Issue 23, 2000, Pages 3740-3742

  Andrews, A M ^a   Romanov, A E ^a,c   Speck, J S ^a   Bobeth, M ^b   Pompe, W ^b  

^a University of California   (United States)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011224991     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1330567     Document Type: Article

References (13)

1. R. A. Burmeister, G. P. Pighini, and P. E. Greene, Trails. Metall. Soc. AIME 245, 587 (1969).
2. G. Springholz, Appl. Phys. Lett. 75, 3099 (1999).
3. K. H. Chang, R. Gibala, D. J. Srolovitz, P. K. Bhattacharya, and J. F. Mansfield, J. Appl. Phys. 67, 4093 (1990).
4. G. H. Olsen, J. Cryst. Growth 31, 223 (1975).
5. S. Kishino, M. Ogirima, and K. Kurata, J. Electrochem. Soc. 119, 617 (1972).
6. J. W. P. Hsu, E. A. Fitzgerald, Y. H. Xie, P. J. Silverman, and M. J. Cardillo, Appl. Phys. Lett. 61, 1293 (1992).
7. F. Jonsdottir and L. B. Freund, Mech. Mater. 20, 337 (1995).
8. H. Gao, J. Mech. Phys. Solids 42, 741 (1994).
9. S. Y. Shiryaev, F. Jensen, and J. W. Petersen, Appl. Phys. Lett. 64, 3305 (1994).
10. M. A. Lutz, R. M. Feenstra, F. K. LeGoues, P. M. Mooney, and J. O. Chu, Appl. Phys. Lett. 66, 724 (1995).
11. A. Krost, G. Bauer, and J. Woitok, in Optical Characterization of Epitaxial Semiconductor Layers, edited by G. Bauer and W. Richter (Springer, New York, 1996), p. 287.
12. J. Lothe, in Elastic Strain Fields and Dislocation Mobility, edited by V. L. Indenbom and J. Lothe (North-Holland, New York, 1992), p. 361.
13. A. E. Romanov and V. I. Vladimirov, in Dislocations in Solids, edited by F. R. N. Nabarro (Elsevier, New York, 1992), Vol. 9, p. 191.