Single event burnout in power diodes: Mechanisms and models

Microelectronics Reliability

Volumn 46, Issue 2-4, 2006, Pages 317-325

  Albadri, A M ^a   Schrimpf, R D ^a   Galloway, K F ^a   Walker, D G ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIODE AMPLIFIERS; EXPLOSIVES; POWER ELECTRONICS; THERMOANALYSIS;

POWER DIODES; POWER MOSFET; SINGLE EVENT BURNOUT (SEB); TERRESTRIAL APPLICATIONS;

POWER AMPLIFIERS;

EID: 30844470676     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2005.06.015     Document Type: Article

References (28)

1. A.E. Waskiewicz, J.W. Groninger, V.H. Strahan, and D.M. Long Burnout of power MOS transistors with heavy ions of 252-Cf IEEE Trans Nucl Sci 33 1986 1710 1713
2. J.L. Titus Single event burnout of power bipolar junction transistors IEEE Trans Nucl Sci 38 1991 1315 1322
3. Kabza H, Schulze H-J, Gerstenmaier Y, Voss P, Wilhelmi J, Schmid W, et al. Cosmic radiation as a possible cause for power device failure and possible countermeasures. In: Proceedings of the 6th international symposium on power semiconductor devices & IC's, 9-12, Davos, Switzerland, May 1994.
4. H.R. Zeller Cosmic ray induced failures in high power semiconductor devices Solid-State Electron 38 1995 2041 2046
5. G.H. Johnson, J.M. Palau, C. Dachs, K.F. Galloway, and R.D. Schrimpf A review of the techniques used for modeling single-event effects in power MOSFETs IEEE Trans Nucl Sci 43 1996 546 560
6. K.H. Maier, A. Denker, P. Voss, and H.-W. Becker Single-event burnout in high power diodes Nucl Instrum Methods Phys Res B 146 1998 596 600
7. T. Wrobel, and D. Beutler Solutions to heavy ion induced avalanche burnout in power devices IEEE Trans Nucl Sci 39 1992 1636 1641
8. J.H. Hohl, and K.F. Galloway Analytical model for single event burnout of power MOSFETs IEEE Trans Nucl Sci 34 1987 1275 1280
9. S. Kuboyama, S. Matsuda, and T. Kanno Mechanism for single event burnout of power MOSFETs IEEE Trans Nucl Sci 39 1992 1698 1703
10. B.J. Baliga Modern power devices 1987 John Wiley and Sons, Inc.
11. J.H. Hohl, and G.H. Johnson Features of the triggering mechanism for single event burnout of power MOSFETS IEEE Trans Nucl Sci 36 1989 2260 2266
12. Franck Roubaud, Charles Dachs, Jean-Marie Palau, Jean Gasiot, and Pierre Tastet Experimental and 2D simulation study of the single event burnout in N-channel power MOSFETs IEEE Trans Nucl Sci 40 1993 1952 1958
13. Charles Dachs, Franck Roubaud, Jean-Marie Palau, Guy Bruguier, and Jean Gasiot Evidence of the ion's impact position effect on SEB in n-channel power MOSFETs IEEE Trans Nucl Sci 41 1994 2167 2171
14. Charles Dachs, Franck Roubaud, Jean-Marie Palau, Guy Bruguier, Jean Gasiot, and Pierre Tastet Simulation aided hardening of N-channel power MOSFETs to prevent single event burnout IEEE Trans Nucl Sci 42 1995 1935 1939
15. Voss P, Maier K, Becker H, Normand E, Wert J, Oberg K, et al. Irradiation experiments with high voltage power devices as a possible means to predict failure rates due to cosmic rays. In: Proceedings of the IEEE international symposium on power semiconductor devices and IC's, 169-173, Weimar, Germany, 1997.
16. Busatto G, Iannuzzo F, Wyss J, Pantano D, Bisello D. Effects of heavy ion impact on power diodes, radiation and its effects on components and systems, 1999. RADECS 99. In: 1999 fifth european conference on, 13-17 September 1999. p. 205-9.
17. G. Soelkner, P. Voss, W. Kaindl, G. Wachutka, K.H. Maier, and H.-W. Becker Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation IEEE Trans Nucl Sci 47 2000 2365 2372
18. E. Normand, J. Wert, D. Oberg, and P. Majewski Neutron induced single event burnout in high voltage electronics IEEE Trans Nucl Sci 44 1997 2358 2366
19. G. Busatto, F. Iannuzzo, F. Velardi, and J. Wyss Non-destructive tester for single event burnout of power diodes Microelectron Reliab 41 2001 1725 1729
20. Yu. Tsyganov, W. Kushniruk, and A. Polyakov A look at the phenomenon of charge multiplication in silicon radiation detector within the concept of dynamic focusing of the electric field IEEE Trans Nucl Sci 43 1996 2496
21. G. Soelkner, W. Kaindl, H.-J. Schulze, and G. Wachutka Reliability of power electronic devices against cosmic radiation-induced failure Microelectron Reliab 44 2004 1399 1406
22. Hallen A, Bleichner H, Nordgren K. Cosmic ray induced DC-stability failure in Si diodes, power semiconductor devices and IC's, 1997, ISPSD '97. In: 1997 IEEE international symposium on, 26-29 May 1997. p. 121-4.
23. Kaindl W, Solkner G, Wachutka G. Analysis of charge carrier multiplication events in NPT and PT-diodes triggered by an ionizing particle, electron devices and solid-state circuits. In: 2003 IEEE conference on, 16-18 December 2003. p. 383-6.
24. Walker DG, Al-badri AM, Fisher TS, Schrimpf RD. Simulation of single event failure in power diodes. In: Proceedings of IMECE' 02, 17-22, New Orleans, Louisiana, USA, 2002.
25. H. Egawa Avalanche characteristics and failure mechanism of high voltage diodes IEEE Trans Electron Dev 13 1966 754 758
26. C. Jacoboni, C. Canali, G. Ottaviani, and A. Quaranta A review of some charge transport properties of silicon Solid-State Electron 20 1977 77 89
27. A. Raman, D.G. Walker, and T.S. Fisher Simulation of nonequilibrium thermal effects in power LDMOS transistors Solid-State Electron 47 2003 1265 1273
28. D.G. Walker, and R.A. Weller Phonon production and nonequilibrium transport from ion strikes IEEE Trans Nucl Sci 51 2004 3318 3323