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Volumn 7, Issue , 2002, Pages 39-45

Simulation of single-event failure in power diodes

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; ENERGY TRANSFER; MECHANICAL ENGINEERING;

EID: 78249271059     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1115/IMECE2002-32116     Document Type: Conference Paper
Times cited : (5)

References (20)
  • 1
    • 0029504304 scopus 로고
    • Cosmic ray induced failures in high power semiconductor devices
    • H. R. Zeller. Cosmic ray induced failures in high power semiconductor devices. Solid-State Electronics, 38(12): 2041-2046, 1995.
    • (1995) Solid-State Electronics , vol.38 , Issue.12 , pp. 2041-2046
    • Zeller, H.R.1
  • 2
    • 0019577364 scopus 로고
    • The effect of sea level cosmic rays on electronic devices
    • J. F. Ziegler and W. A. Lanford. The effect of sea level cosmic rays on electronic devices. Journal of Applied Physics, 52:4305-4312, 1981.
    • (1981) Journal of Applied Physics , vol.52 , pp. 4305-4312
    • Ziegler, J.F.1    Lanford, W.A.2
  • 4
    • 0027844670 scopus 로고
    • Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET's
    • December
    • Franck Roubaud, Charles Dachs, Jean-Marie Palau, Jean Gasiot, and Pierre Tastet. Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET's. IEEE Transactions on Nuclear Science, 40(6):1952-1958, December 1993.
    • (1993) IEEE Transactions on Nuclear Science , vol.40 , Issue.6 , pp. 1952-1958
    • Roubaud, F.1    Dachs, C.2    Palau, J.-M.3    Gasiot, J.4    Tastet, P.5
  • 5
    • 0028710491 scopus 로고
    • Evidence of the ion's impact position effect on seb in n-channel power mosfets
    • December
    • Charles Dachs, Franck Roubaud, Jean-Marie Palau, Guy Bruguier, and Jean Gasiot. Evidence of the ion's impact position effect on seb in n-channel power mosfets. IEEE Transactions on Nuclear Science, 41(6): 2167-2171, December 1994.
    • (1994) IEEE Transactions on Nuclear Science , vol.41 , Issue.6 , pp. 2167-2171
    • Dachs, C.1    Roubaud, F.2    Palau, J.-M.3    Bruguier, G.4    Gasiot, J.5
  • 6
    • 55249100702 scopus 로고
    • Temperature dependence of single-event burnout in n-channel power MOSFETs
    • December
    • Gregory H. Johnson, Ronald D. Schrimpf, and Keneth F. Galloway. Temperature dependence of single-event burnout in n-channel power MOSFETs. IEEE Transactions on Nuclear Science, 39(6):1605-1612, December 1992.
    • (1992) IEEE Transactions on Nuclear Science , vol.39 , Issue.6 , pp. 1605-1612
    • Johnson, G.H.1    Schrimpf, R.D.2    Galloway, K.F.3
  • 7
    • 0023532531 scopus 로고
    • Analytical model for single event burnout of power MOSFETs
    • December
    • Jakob H. Hohl and Kenneth F. Galloway. Analytical model for single event burnout of power MOSFETs. IEEE Transactions on Nuclear Science, 34(6):1275-1280, December 1987.
    • (1987) IEEE Transactions on Nuclear Science , vol.34 , Issue.6 , pp. 1275-1280
    • Hohl, J.H.1    Galloway, K.F.2
  • 12
    • 0032084050 scopus 로고    scopus 로고
    • Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules
    • C. Findeisen, E. Herr, M. Schenkel, R. Schlegel, and H. R. Zeller. Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules. Microelectronics Reliability, 38:1335-1339, 1998.
    • (1998) Microelectronics Reliability , vol.38 , pp. 1335-1339
    • Findeisen, C.1    Herr, E.2    Schenkel, M.3    Schlegel, R.4    Zeller, H.R.5
  • 16
  • 17
    • 0004022746 scopus 로고    scopus 로고
    • Silvaco International. Santa Clara, California 94054, November
    • Silvaco International. Atlas Users's Manual - Device Simulation Software. Santa Clara, California 94054, November 1998.
    • (1998) Atlas Users's Manual - Device Simulation Software


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.