-
1
-
-
0029504304
-
Cosmic ray induced failures in high power semiconductor devices
-
H. R. Zeller. Cosmic ray induced failures in high power semiconductor devices. Solid-State Electronics, 38(12): 2041-2046, 1995.
-
(1995)
Solid-State Electronics
, vol.38
, Issue.12
, pp. 2041-2046
-
-
Zeller, H.R.1
-
2
-
-
0019577364
-
The effect of sea level cosmic rays on electronic devices
-
J. F. Ziegler and W. A. Lanford. The effect of sea level cosmic rays on electronic devices. Journal of Applied Physics, 52:4305-4312, 1981.
-
(1981)
Journal of Applied Physics
, vol.52
, pp. 4305-4312
-
-
Ziegler, J.F.1
Lanford, W.A.2
-
3
-
-
0022921353
-
Burnout of power mos transistors with heavy ions of 252-Cf
-
A. E.Waskiewicz, J. W. Groninger, V. H. Strahan, and D. M. Long. Burnout of power mos transistors with heavy ions of 252-Cf. IEEE Transactions on Nuclear Science, 33:1710-1713, 1986.
-
(1986)
IEEE Transactions on Nuclear Science
, vol.33
, pp. 1710-1713
-
-
E.Waskiewicz, A.1
Groninger, J.W.2
Strahan, V.H.3
Long, D.M.4
-
4
-
-
0027844670
-
Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET's
-
December
-
Franck Roubaud, Charles Dachs, Jean-Marie Palau, Jean Gasiot, and Pierre Tastet. Experimental and 2D simulation study of the single-event burnout in n-channel power MOSFET's. IEEE Transactions on Nuclear Science, 40(6):1952-1958, December 1993.
-
(1993)
IEEE Transactions on Nuclear Science
, vol.40
, Issue.6
, pp. 1952-1958
-
-
Roubaud, F.1
Dachs, C.2
Palau, J.-M.3
Gasiot, J.4
Tastet, P.5
-
5
-
-
0028710491
-
Evidence of the ion's impact position effect on seb in n-channel power mosfets
-
December
-
Charles Dachs, Franck Roubaud, Jean-Marie Palau, Guy Bruguier, and Jean Gasiot. Evidence of the ion's impact position effect on seb in n-channel power mosfets. IEEE Transactions on Nuclear Science, 41(6): 2167-2171, December 1994.
-
(1994)
IEEE Transactions on Nuclear Science
, vol.41
, Issue.6
, pp. 2167-2171
-
-
Dachs, C.1
Roubaud, F.2
Palau, J.-M.3
Bruguier, G.4
Gasiot, J.5
-
6
-
-
55249100702
-
Temperature dependence of single-event burnout in n-channel power MOSFETs
-
December
-
Gregory H. Johnson, Ronald D. Schrimpf, and Keneth F. Galloway. Temperature dependence of single-event burnout in n-channel power MOSFETs. IEEE Transactions on Nuclear Science, 39(6):1605-1612, December 1992.
-
(1992)
IEEE Transactions on Nuclear Science
, vol.39
, Issue.6
, pp. 1605-1612
-
-
Johnson, G.H.1
Schrimpf, R.D.2
Galloway, K.F.3
-
7
-
-
0023532531
-
Analytical model for single event burnout of power MOSFETs
-
December
-
Jakob H. Hohl and Kenneth F. Galloway. Analytical model for single event burnout of power MOSFETs. IEEE Transactions on Nuclear Science, 34(6):1275-1280, December 1987.
-
(1987)
IEEE Transactions on Nuclear Science
, vol.34
, Issue.6
, pp. 1275-1280
-
-
Hohl, J.H.1
Galloway, K.F.2
-
8
-
-
0027594721
-
Simulating single-event burnout of n-channel power MOSFET's
-
May
-
Gregory H. Johnson, Jakob H. Hohl, Ronald D. Schrimpf, and Kenneth F. Galloway. Simulating single-event burnout of n-channel power MOSFET's. IEEE Transactions on Electron Devices, 40(5):1001-1008, May 1993.
-
(1993)
IEEE Transactions on Electron Devices
, vol.40
, Issue.5
, pp. 1001-1008
-
-
Johnson, G.H.1
Hohl, J.H.2
Schrimpf, R.D.3
Galloway, K.F.4
-
9
-
-
0030126134
-
A review of the techniques used for modeling single-event effects in power mosfets
-
G. H. Johnson, J.M. Palau, C. Dachs, K. F. Galloway, and R. D. Schrimpf. A review of the techniques used for modeling single-event effects in power mosfets. IEEE Transactions on Nuclear Science, 43:546-560, 1996.
-
(1996)
IEEE Transactions on Nuclear Science
, vol.43
, pp. 546-560
-
-
Johnson, G.H.1
Palau, J.M.2
Dachs, C.3
Galloway, K.F.4
Schrimpf, R.D.5
-
10
-
-
0035310861
-
Thermal modeling of single event burnout failure in semiconductor power devices
-
D. G. Walker, T. S. Fisher, J. Liu, and R. D. Schrimpf. Thermal modeling of single event burnout failure in semiconductor power devices. Journal of Microelectronics and Reliability, 41(4):571-578, 2000.
-
(2000)
Journal of Microelectronics and Reliability
, vol.41
, Issue.4
, pp. 571-578
-
-
Walker, D.G.1
Fisher, T.S.2
Liu, J.3
Schrimpf, R.D.4
-
11
-
-
0031342843
-
Heavy ion induced failures in a power IGBT
-
December
-
Eric Lorfèvre, Charles Dachs, Céline Detcheverry, Jean-Marie Palau, Jean Gasiot, Franck Roubaud, Marie-Catherine Calvert, and Robert Ecoffet. Heavy ion induced failures in a power IGBT. IEEE Transactions on Nuclear Science, 44(6):2353-2357, December 1997.
-
(1997)
IEEE Transactions on Nuclear Science
, vol.44
, Issue.6
, pp. 2353-2357
-
-
Lorfèvre, E.1
Dachs, C.2
Detcheverry, C.3
Palau, J.-M.4
Gasiot, J.5
Roubaud, F.6
Calvert, M.-C.7
Ecoffet, R.8
-
12
-
-
0032084050
-
Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules
-
C. Findeisen, E. Herr, M. Schenkel, R. Schlegel, and H. R. Zeller. Extrapolation of cosmic ray induced failures from test to field conditions for IGBT modules. Microelectronics Reliability, 38:1335-1339, 1998.
-
(1998)
Microelectronics Reliability
, vol.38
, pp. 1335-1339
-
-
Findeisen, C.1
Herr, E.2
Schenkel, M.3
Schlegel, R.4
Zeller, H.R.5
-
13
-
-
0028697097
-
Cosmic radiation as a possble cause for power device failure and possible countermeasures
-
Davos, Switzerland, May
-
H. Kabza, H.-J. Schulze, Y. Gerstenmaier, P. Voss, J. Wilhelmi, W. Schmid, F. Pfirsch, and K. Platzöder. Cosmic radiation as a possble cause for power device failure and possible countermeasures. In Proceedings of the 6th International Symposium on Power Semiconductor Devices & IC's, pages 9-12, Davos, Switzerland, May 1994.
-
(1994)
Proceedings of the 6th International Symposium on Power Semiconductor Devices & IC's
, pp. 9-12
-
-
Kabza, H.1
Schulze, H.-J.2
Gerstenmaier, Y.3
Voss, P.4
Wilhelmi, J.5
Schmid, W.6
Pfirsch, F.7
Platzöder, K.8
-
14
-
-
0030674986
-
Irradiation experiments with high voltage power devices as a possible means to predict failure rates due to cosmic rays
-
Weimar, Germany
-
P. Voss, K. Maier, H. Becker, E Normand, J. Wert, K. Oberg, and P. Majewske. Irradiation experiments with high voltage power devices as a possible means to predict failure rates due to cosmic rays. In Proceedings of the IEEE International Symposium on Power Semiconductor Devices and IC's, pages 169-173, Weimar, Germany, 1997.
-
(1997)
Proceedings of the IEEE International Symposium on Power Semiconductor Devices and IC's
, pp. 169-173
-
-
Voss, P.1
Maier, K.2
Becker, H.3
Normand, E.4
Wert, J.5
Oberg, K.6
Majewske, P.7
-
15
-
-
0032477033
-
Single-event burnout in high power diodes
-
K. H. Maier, A. Denker, P. Voss, and H.-W. Becker. Single-event burnout in high power diodes. Nuclear Instruments and Methods in Physics Research B, 146: 596-600, 1998.
-
(1998)
Nuclear Instruments and Methods in Physics Research B
, vol.146
, pp. 596-600
-
-
Maier, K.H.1
Denker, A.2
Voss, P.3
Becker, H.-W.4
-
16
-
-
0034451821
-
Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation
-
December
-
G. Soelkner, P. VOss, W. Kaindl, G. Wachutka, K. H. Maier, and H.-W. Becker. Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation. IEEE Transactions on Nuclear Science, 47(6):2365-2372, December 2000.
-
(2000)
IEEE Transactions on Nuclear Science
, vol.47
, Issue.6
, pp. 2365-2372
-
-
Soelkner, G.1
VOss, P.2
Kaindl, W.3
Wachutka, G.4
Maier, K.H.5
Becker, H.-W.6
-
17
-
-
0004022746
-
-
Silvaco International. Santa Clara, California 94054, November
-
Silvaco International. Atlas Users's Manual - Device Simulation Software. Santa Clara, California 94054, November 1998.
-
(1998)
Atlas Users's Manual - Device Simulation Software
-
-
-
18
-
-
0029309244
-
Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects
-
May
-
Y. Apanovich, P. Blakey, R. Cottle, E. Lyumkis, B. Polsky, A. Shur, and A. Tcherniaev. Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects. IEEE Transactions on Electron Devices, 42(5):890-897, May 1995.
-
(1995)
IEEE Transactions on Electron Devices
, vol.42
, Issue.5
, pp. 890-897
-
-
Apanovich, Y.1
Blakey, P.2
Cottle, R.3
Lyumkis, E.4
Polsky, B.5
Shur, A.6
Tcherniaev, A.7
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