Charge carrier avalanche multiplication in high-voltage diodes triggered by ionizing radiation

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2365-2372

  Soelkner, Gerald ^a   Voss, Peter ^a   Kaindl, Winfried ^b   Wachutka, Gerhard ^b   Maier, K H ^c   Becker, H W ^d  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c HAHN MEITNER INSTITUT   (Germany)

^d RUHR UNIVERSITY BOCHUM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CHARGE CARRIERS; COMPUTER SIMULATION; HEAVY IONS; HETEROJUNCTIONS; IONIZING RADIATION; IRRADIATION; PROTONS; THRESHOLD VOLTAGE;

CHARGE CARRIER AVALANCHE MULTIPLICATION; HIGH ENERGY PROTONS; HIGH VOLTAGE DIODES;

RADIATION DAMAGE;

EID: 0034451821     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903778     Document Type: Conference Paper

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