Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition

Applied Physics A: Materials Science and Processing

Volumn 82, Issue 4 SPEC. ISS., 2006, Pages 659-664

  Yasseri, A A ^a   Sharma, S ^a   Kamins, T I ^a   Li, Z ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COATINGS; GALVANIZED METAL; GOLD; IONS; METAL ANALYSIS; MOLECULES; NANOTECHNOLOGY; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON;

100 PICOMOLAR-MICROMOLAR RANGE; CVD-GROWN SILICON NANOWIRES; GALVANIC REDUCTION; HIGH-DENSITY SILICON NANOWIRES; METAL IONS; METAL NANOCRYSTAL ASSEMBLIES; METAL-CATALYZED;

CRYSTAL GROWTH;

EID: 30444443156     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-005-3446-3     Document Type: Article

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