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Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2389-2393

Investigation on muitilayered chemical vapor deposited Ti/TiN films as the diffusion barriers in Cu and Al metallization

(6) Hu, J C a Chang, T C b,c Chen, L J a Yang, Y L b Chen, S Y a Chang, C Y d

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c NATIONAL SUN YAT SEN UNIVERSITY (Taiwan)

d NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AL-METALLIZATION; BARRIER PROPERTIES; CHEMICAL VAPOR DEPOSITED; CU FILMS; CU METALLIZATION; DEVICE APPLICATION; EFFECTIVE DIFFUSION; LOW PRESSURE CVD; MULTI-LAYERED; PLASMA POST-TREATMENT; PLASMA-ENHANCED CVD; TI/TIN FILM; TIN FILMS;

CHEMICAL VAPOR DEPOSITION; CHLORINE; DIFFRACTION; DIFFUSION BARRIERS; FILM GROWTH; METALLIC FILMS; METALLIZING; TITANIUM NITRIDE; X RAY DIFFRACTION;

COPPER;

EID: 0000155483 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.581777 Document Type: Conference Paper

Times cited : (8)

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