Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb

Semiconductor Science and Technology

Volumn 15, Issue 1, 2000, Pages 34-39

  Rakovska, A ^a   Berger, V ^a   Marcadet, X ^a   Vinter, B ^a   Bouzehouane, K ^b,c   Kaplan, D ^b  

^a THALES   (France)

^b ECOLE POLYTECHNIQUE   (France)

^c Thales Research K Technology Domaine de Corbeville   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ENERGY GAP; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; PHOTOCONDUCTIVITY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

SHOCKLEY-READ LIMITED LIFETIME;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0033640291     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/1/306     Document Type: Article

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