TEM investigation of defects in arsenic doped layers grown in-situ by MBE

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 623-626

  Zandian, Majid ^a   Goo, Edward ^b  

^a ROCKWELL SCIENCE CENTER   (United States)

^b University of Southern California ^*  (United States)

Author keywords

As incorporation; HgCdTe; MBE; TEM

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; CRYSTAL LATTICES; ENERGY GAP; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

COLUMNAR TWIN DEFECTS; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035360129     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665845     Document Type: Article

References (9)