Low-temperature activation of As in Hg1-xCdxTe(211) grown on Si by molecular beam epitaxy

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 694-698

  Boieriu, Paulepir ^a   Chen, Y ^a   Nathan, V ^b  

^a EPIR TECHNOLOGIES INC   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

Activation; Annealing; Arsenic, doping; Heterostructures; HgCdTe; MBE

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; ARSENIC; HALL EFFECT; LOW TEMPERATURE EFFECTS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

PHOTOVOLTAIC STRUCTURES;

INFRARED DETECTORS;

EID: 0036637804     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0221-5     Document Type: Article

References (14)