Measurement of minority carrier lifetime in n-type MBE HgCdTe and its dependence on annealing

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 698-702

  Edwall, D D ^a   Dewames, R E ^a   McLevige, W V ^a   Pasko, J G ^a   Arias, J M ^a  

^a ROCKWELL SCIENCE CENTER   (United States)

Author keywords

HgCdTe; Lifetime; Molecular beam epitaxy (MBE)

Indexed keywords

EID: 0004055936     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0039-x     Document Type: Article

References (6)

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