Doping of molecular beam epitaxy HgCdTe using an arsenic cracker source (As2)

Journal of Electronic Materials

Volumn 31, Issue 7, 2002, Pages 660-663

  Almeida, L A ^a  

^a NIGHT VISION AND ELECTRONIC SENSORS DIRECTORATE   (United States)

Author keywords

Arsenic doping; HgCdTe; p type doping

Indexed keywords

ARSENIC; DEPOSITION; DIMERS; DOPING (ADDITIVES); MOLECULAR BEAM EPITAXY; THERMAL EFFECTS;

CRACKER CELL; EFFUSION CELL;

MERCURY COMPOUNDS;

EID: 0036637879     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0215-3     Document Type: Conference Paper

References (2)