Arsenic incorporation during MBE growth of HgCdTe

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 799-803

  Berding, M A ^a   Sher, A ^a  

^a SRI INTERNATIONAL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CRYSTAL DEFECTS; CRYSTAL ORIENTATION; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLUBILITY;

MERCURY CADMIUM TELLURIDE; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING FILMS;

EID: 0032650978     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0073-3     Document Type: Article

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