On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 789-793

  Schaake, H F ^a  

^a DRS Sensors and Targeting Systems Inc   (United States)

Author keywords

Activation of As; HgCdTe; Kinetics

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATOMS; DIFFUSION; MERCURY COMPOUNDS; REACTION KINETICS; TELLURIUM; THERMAL EFFECTS;

MERCURY CADMIUM TELLURIDE; METAL SUBLATTICE SITE; TELLURIUM SUBLATTICE SITE;

ARSENIC;

EID: 0035360163     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665874     Document Type: Article

References (9)

1. Properties of narrow-gap cadmium-based compounds