Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 869-872

  Lee, T S ^a   Garland, J ^a   Grein, C H ^a   Sumstine, M ^a   Jandeska, A ^a   Selamet, Y ^a   Sivananthan, S ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; CARRIER CONCENTRATION; CHEMICAL BONDS; COMPOSITION EFFECTS; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; POINT DEFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SOLID ELECTROLYTES;

MERCURY CADMIUM TELLURIDE; VAN DER PAUW TECHNIQUE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033691545     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0240-z     Document Type: Article

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