SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 643-646

Composition control of long wavelength MBE HgCdTe using in-situ spectroscopic ellipsometry

(4) Edwall, D a Phillips, J a Lee, D a Arias, J a

a ROCKWELL SCIENCE CENTER (United States)

Author keywords

HgCdTe; MBE; Spectroscopic ellipsometry

Indexed keywords

COMPOSITION EFFECTS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; TEMPERATURE;

EFFUSION CELL TEMPERATURE; IN SITU SPECTROSCOPIC ELLIPSOMETRY; MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0035359450 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/BF02665849 Document Type: Article

Times cited : (17)

References (13)

1
- 0001890415
- (1997) J. Electron. Mater. , vol.26 , pp. 493
- Edwall, D.D.¹ Zandian, M.² Chen, A.C.³ Arias, J.M.⁴

2
- 1342318416
- (1998) Thin Sol. Films , vol.313-314 , pp. 137
- Johs, B.¹ Herzinger, C.M.² Dinan, J.H.³ Cornfeld, A.⁴ Benson, J.D.⁵

3
- 0000761169
- (1998) J. Electron. Mater. , vol.27 , pp. 500
- Almeida, L.A.¹ Johnson, J.N.² Benson, J.D.³ Dinan, J.H.⁴ Johs, B.⁵

4
- 0032630687
- (1999) J. Electron. Mater. , vol.28 , pp. 749
- Olson, G.L.¹ Roth, J.A.² Brewer, P.D.³ Rajavel, R.D.⁴ Jamba, D.M.⁵ Jenson, J.E.⁶ Johs, B.⁷

5
- 0032630058
- (1999) J. Electron. Mater. , vol.28 , pp. 756
- Aqariden, F.¹ Duncan, W.M.² Shih, H.D.³ Almeida, L.A.⁴ Bevan, M.J.⁵

6
- 0032650976
- (1999) J. Cryst. Growth , vol.201-202 , pp. 22
- Almeida, L.A.¹ Dinan, J.H.²

7
- 4243262229
- (1998) Thin Sol. Films , vol.313-314 , pp. 490
- Johs, B.¹ Herzinger, C.² Dinan, J.H.³ Cornfeld, A.⁴ Bensen, J.D.⁵ Doctor, D.⁶ Olson, G.⁷ Ferguson, I.⁸ Pelczynski, M.⁹ Chow, P.¹⁰ Kuo, C.H.¹¹ Johnson, S.¹²

8
- 0000558123
- (1996) J. Electron. Mater. , vol.25 , pp. 1394
- Bajaj, J.¹ Arias, J.M.² Zandian, M.³ Edwall, D.D.⁴ Pasko, J.G.⁵ Bubulac, L.O.⁶ Kozlowski, L.J.⁷

9
- 0004543128
- (1992) J. Vac. Sci. Technol. B , vol.10 , pp. 1633
- Bubulac, L.O.¹ Edwall, D.D.² Cheung, J.T.³ Viswanathan, C.R.⁴

10
- 85011864893
- J.A. Woollam Co., 645 M St., Suite 102, Lincoln, NE 68508

11
- 0029305113
- (1995) J. Electron. Mater. , vol.24 , pp. 445
- Dakshina Murthy, S.¹ Bhat, I.B.² Johs, B.³ Pittal, S.⁴ He, P.⁵

12
- 33746683087
- (1990) J. Appl. Phys. , vol.68 , pp. 5925
- Snyder, P.G.¹ Woollam, J.A.² Alterovitz, S.A.³ Johs, B.⁴

13
- 85011850487
- to be published in J. Vac. Sci. Technol. B
- Phillips, J.¹ Edwall, D.² Lee, D.³ Arias, J.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.